RJK0368DPA-00#J0

Renesas Electronics America Inc

RJK0368DPA-00#J0

Analog & Power

MOSFET N-CH 30V 20A 8WPAK

Obsolete8-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs14.3mOhm @ 10A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds730 pF @ 10 V
ManufacturerRenesas Electronics America Inc
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage30 V
Current - Continuous Drain (Id) @ 25°C20A (Ta)
Max Power Dissipation25W (Tc)

Mechanical

PackageBulk
Package / Case8-PowerWDFN
Supplier Device Package8-WPAK

Environmental

Operating Temperature150°C(TJ)