RJK0301DPB-00#J0

Renesas Electronics America Inc

RJK0301DPB-00#J0

Analog & Power

MOSFET N-CH 30V 60A LFPAK

ObsoleteSC-100, SOT-669Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.8mOhm @ 30A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs32 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds5000 pF @ 10 V
ManufacturerRenesas Electronics America Inc
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)

Electrical

Drain-to-Source Voltage30 V
Current - Continuous Drain (Id) @ 25°C60A (Ta)
Max Power Dissipation65W (Tc)

Mechanical

PackageBulk
Package / CaseSC-100, SOT-669
Supplier Device PackageLFPAK