R1RW0416DGE-2PR#B1

Renesas Electronics America Inc

R1RW0416DGE-2PR#B1

Datasheet

Memory & Storage

IC SRAM 4MBIT PARALLEL 44SOJ

Active44-BSOJ (0.400", 10.16mm Width)Memory & Storage

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Memory TypeVolatile
TechnologySRAM
Access Time12 ns
Base Product NumberR1RW0416
ManufacturerRenesas Electronics America Inc
Mounting TypeSurface Mount
Product StatusActive
Write Cycle Time12ns

Electrical

Memory Size4Mbit
Memory FormatSRAM
Memory InterfaceParallel
Supply Voltage3V ~ 3.6V
Memory Organization256K x 16

Mechanical

PackageTube
Package / Case44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package44-SOJ

Environmental

Operating Temperature0°C~70°C(TA)