R1EV58064BDARBI#B2

Renesas Electronics America Inc

R1EV58064BDARBI#B2

Memory & Storage

IC EEPROM 64KBIT PARALLEL 28DIP

Obsolete28-DIP (0.600", 15.24mm)Memory & Storage

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Memory TypeNon-Volatile
TechnologyEEPROM
Access Time100 ns
Base Product NumberR1EV58064
ManufacturerRenesas Electronics America Inc
Mounting TypeThrough Hole
Product StatusObsolete
SeriesR1EV58064BxxR
Write Cycle Time10ms

Electrical

Memory Size64Kbit
Memory FormatEEPROM
Memory InterfaceParallel
Supply Voltage2.7V ~ 5.5V
Memory Organization8K x 8

Mechanical

PackageTray
Package / Case28-DIP (0.600", 15.24mm)
Supplier Device Package28-DIP

Environmental

Operating Temperature-40°C~85°C(TA)