NP83P04PDG-E1-AY

Renesas Electronics America Inc

NP83P04PDG-E1-AY

Datasheet

Analog & Power

MOSFET P-CH 40V 83A TO-263

ActiveTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5.3mOhm @ 41.5A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9820 pF @ 10 V
ManufacturerRenesas Electronics America Inc
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage40 V
Current - Continuous Drain (Id) @ 25°C83A (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263