NP82N055NUG-S18-AY

Renesas Electronics America Inc

NP82N055NUG-S18-AY

Analog & Power

MOSFET N-CH 55V 82A TO262

ObsoleteTO-262-3 Long Leads, I²Pak, TO-262AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs6mOhm @ 41A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9600 pF @ 25 V
ManufacturerRenesas Electronics America Inc
Mounting TypeThrough Hole
Product StatusObsolete
SeriesAutomotive, AEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage55 V
Current - Continuous Drain (Id) @ 25°C82A (Tc)
Max Power Dissipation1.8W (Ta), 143W (Tc)

Mechanical

PackageTube
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackageTO-262

Environmental

Operating Temperature175°C