NP80N04MHE-S18-AY

Renesas Electronics America Inc

NP80N04MHE-S18-AY

Analog & Power

MOSFET N-CH 40V 80A TO220

ObsoleteTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs8mOhm @ 40A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3300 pF @ 25 V
ManufacturerRenesas Electronics America Inc
Mounting TypeThrough Hole
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage40 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Max Power Dissipation1.8W (Ta), 120W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220

Environmental

Operating Temperature175°C(TJ)