NP75N04YLG-E1-AY

Renesas Electronics America Inc

NP75N04YLG-E1-AY

Datasheet

Analog & Power

ABU / MOSFET

Active8-PowerLDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.8mOhm @ 38A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6450 pF @ 25 V
ManufacturerRenesas Electronics America Inc
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C75A (Ta)
Max Power Dissipation138W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerLDFN
Supplier Device Package8-HSON (5x5.4)

Environmental

Operating Temperature175°C