HAT2201WP-EL-E

Renesas Electronics America Inc

HAT2201WP-EL-E

Analog & Power

15A, 100V, N-CHANNEL MOSFET

Active8-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs43mOhm @ 7.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1450 pF @ 10 V
ManufacturerRenesas Electronics America Inc
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)

Electrical

Drain-to-Source Voltage100 V
Current - Continuous Drain (Id) @ 25°C15A (Ta)

Mechanical

PackageBulk
Package / Case8-PowerWDFN
Supplier Device Package8-WPAK

Environmental

Operating Temperature150°C(TJ)