HAT2140H-EL-E

Renesas Electronics America Inc

HAT2140H-EL-E

Datasheet

Analog & Power

MOSFET N-CH 100V 25A LFPAK

ActiveSC-100, SOT-669Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs16mOhm @ 12.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6500 pF @ 10 V
ManufacturerRenesas Electronics America Inc
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Current - Continuous Drain (Id) @ 25°C25A (Ta)
Max Power Dissipation30W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseSC-100, SOT-669
Supplier Device PackageLFPAK

Environmental

Operating Temperature150°C(TJ)