H5N3007FL-M0-E#T2

Renesas Electronics America Inc

H5N3007FL-M0-E#T2

Analog & Power

MOSFET N-CH 300V 15A TO220FL

ActiveTO-220-3 Full PackAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs160mOhm @ 7.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2180 pF @ 25 V
ManufacturerRenesas Electronics America Inc
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 1mA

Electrical

Drain-to-Source Voltage300 V
Current - Continuous Drain (Id) @ 25°C15A (Ta)
Max Power Dissipation35W (Tc)

Mechanical

PackageBulk
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220FL

Environmental

Operating Temperature150°C