Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 42A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8500 pF @ 10 V |
| Manufacturer | Renesas Electronics America Inc |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage | 75 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 83A (Tc) |
| Max Power Dissipation | 1.5W (Ta), 125W (Tc) |
| Package | Bulk |
|---|---|
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| Operating Temperature | 150°C(TJ) |
|---|