2SK2729-E

Renesas Electronics America Inc

2SK2729-E

Analog & Power

MOSFET N-CH 500V 20A TO3P

ActiveTO-3P-3, SC-65-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs290mOhm @ 10A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3300 pF @ 10 V
ManufacturerRenesas Electronics America Inc
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id3.5V @ 1mA

Electrical

Drain-to-Source Voltage500 V
Current - Continuous Drain (Id) @ 25°C20A (Ta)
Max Power Dissipation150W (Ta)

Mechanical

PackageBulk
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P

Environmental

Operating Temperature150°C