Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 65mOhm @ 9A, 10V |
|---|---|
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 10 V |
| Manufacturer | Renesas Electronics America Inc |
| Mounting Type | Through Hole |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Drain-to-Source Voltage | 60 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Max Power Dissipation | 60W (Tc) |
| Package | Bulk |
|---|---|
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| Operating Temperature | 150°C |
|---|