2SJ532-E

Renesas

2SJ532-E

Analog & Power

2SJ532 - P-CHANNEL POWER MOSFET

ObsoleteTO-220-3 Full PackAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs55mOhm @ 10A, 10V
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds1750 pF @ 10 V
ManufacturerRenesas
Mounting TypeThrough Hole
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 1mA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C20A (Ta)
Max Power Dissipation30W (Tc)

Mechanical

PackageBulk
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220CFM

Environmental

Operating Temperature150°C