2SJ529L06-E

Renesas

2SJ529L06-E

Analog & Power

2SJ529L06 - P-CHANNEL POWER MOSF

ObsoleteTO-251-3 Long Leads, IPak, TO-251ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs160mOhm @ 5A, 10V
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds580 pF @ 10 V
ManufacturerRenesas
Mounting TypeThrough Hole
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 1mA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Max Power Dissipation20W (Tc)

Mechanical

PackageBulk
Package / CaseTO-251-3 Long Leads, IPak, TO-251AB
Supplier Device PackageDPAK(L)-(2)

Environmental

Operating Temperature150°C