2SJ358-T1-AZ

Renesas

2SJ358-T1-AZ

Analog & Power

2SJ358-T1-AZ - P-CHANNEL MOS FET

ObsoleteTO-243AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs300mOhm @ 1.5A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs23.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds600 pF @ 10 V
ManufacturerRenesas
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)+10V, -20V
Vgs(th) (Max) @ Id2V @ 1mA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Max Power Dissipation2W (Ta)

Mechanical

PackageBulk
Package / CaseTO-243AA
Supplier Device PackageMP-2

Environmental

Operating Temperature150°C