2SB601-AZ

Renesas

2SB601-AZ

Analog & Power

2SB601 - PNP SILICON EPITAXIAL T

ObsoleteTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

ManufacturerRenesas
Mounting TypeThrough Hole
Product StatusObsolete
Transistor TypePNP - Darlington
Vce Saturation (Max) @ Ib, Ic1.5V @ 3mA, 3A

Electrical

Voltage - Collector Emitter Breakdown (Max)100 V
Current - Collector (Ic) (Max)5 A
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 3A, 2V
Power - Max1.5 W

Mechanical

PackageBulk
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

Environmental

Operating Temperature150°C (TJ)