RM150N60HD

Rectron USA

RM150N60HD

Datasheet

Analog & Power

MOSFET N-CH 60V 150A TO263-2

ActiveAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.5mOhm @ 75A, 10V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds6500 pF @ 25 V
ManufacturerRectron USA
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C150A (Tc)
Max Power Dissipation220W (Tc)

Mechanical

PackageTape & Reel (TR)
Supplier Device PackageTO-263-2

Environmental

Operating Temperature-55°C ~ 175°C (TJ)