Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 500mOhm @ 4.5A, 15V |
|---|---|
| FET Type | N-Channel |
| Manufacturer | PN Junction Semiconductor |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | P3M |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +20V, -8V |
| Vgs(th) (Max) @ Id | 2.2V @ 5mA |
| Drain-to-Source Voltage | 650 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Current - Continuous Drain (Id) @ 25°C | 9A |
| Max Power Dissipation | 32W |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | DFN8*8 |
| Supplier Device Package | DFN8*8 |
| Operating Temperature | -55°C~175°C(TJ) |
|---|