Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 158mOhm @ 10A, 15V |
|---|---|
| FET Type | N-Channel |
| Manufacturer | PN Junction Semiconductor |
| Mounting Type | Through Hole |
| Product Status | Active |
| Series | P3M |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +20V, -8V |
| Vgs(th) (Max) @ Id | 2.2V @ 5mA (Typ) |
| Drain-to-Source Voltage | 650 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Current - Continuous Drain (Id) @ 25°C | 29A |
| Max Power Dissipation | 153W |
| Package | Tube |
|---|---|
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220-2L |
| Operating Temperature | -55°C ~ 175°C (TJ) |
|---|