General
| Manufacturer | PN Junction Semiconductor |
|---|---|
| Product Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| Series | P3D |
| Technology | SiC (Silicon Carbide) Schottky |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 650 V |
|---|---|
| Current - Average Rectified (Io) | 26A |
| Current - Reverse Leakage @ Vr | 44 µA @ 650 V |
| Speed | No Recovery Time > 500mA (Io) |
Mechanical
| Package | Tube |
|---|---|
| Package / Case | TO-220I-2 |
| Supplier Device Package | TO-220I-2 |
Environmental
| Operating Temperature - Junction | -55°C ~ 175°C |
|---|