General
| FET Type | N-Channel |
|---|---|
| Manufacturer | PN Junction Semiconductor |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | +10V, -20V |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Drain-to-Source Voltage | 650 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Current - Continuous Drain (Id) @ 25°C | 10A |
| Max Power Dissipation | 55.5W |
Mechanical
| Package | Tape & Reel (TR) |
|---|---|
| Supplier Device Package | DFN8*8 |
Environmental
| Operating Temperature | -55°C~150°C(TJ) |
|---|