PSMP050N10NS2_T0_00601

Panjit International Inc

PSMP050N10NS2_T0_00601

Datasheet

Analog & Power

100V/ 5MOHM/ LOW FOM MOSFET

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5mOhm @ 50A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3910 pF @ 50 V
ManufacturerPanjit International Inc.
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.8V @ 270µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Max Power Dissipation138W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220AB-L

Environmental

Operating Temperature-55°C~150°C(TJ)