PSMP032N08NS1_T0_00601

Panjit International Inc

PSMP032N08NS1_T0_00601

Datasheet

Analog & Power

80V/ 3.4MOHM / TJMAX 175C MV MOS

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.4mOhm @ 50A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs76 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds7430 pF @ 40 V
ManufacturerPanjit International Inc.
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.75V @ 250µA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Current - Continuous Drain (Id) @ 25°C166A (Tc)
Max Power Dissipation156W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220AB-L

Environmental

Operating Temperature-55°C~175°C(TJ)