PSMB032N08NS1_R2_00601

Panjit International Inc

PSMB032N08NS1_R2_00601

Datasheet

Analog & Power

80V/ 3.4MOHM / MV MOSFET

ActiveTO-263-3, D2PAK (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.4mOhm @ 50A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs76 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds7430 pF @ 40 V
ManufacturerPanjit International Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.75V @ 250µA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Current - Continuous Drain (Id) @ 25°C161A (Tc)
Max Power Dissipation156W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263

Environmental

Operating Temperature-55°C ~ 150°C (TJ)