PJZ18NA50_T0_10001

Panjit International Inc

PJZ18NA50_T0_10001

Analog & Power

MOSFET

ObsoleteTO-3P-3, SC-65-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs350mOhm @ 9A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2407 pF @ 25 V
ManufacturerPanjit International Inc.
Mounting TypeThrough Hole
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C18A (Ta)
Max Power Dissipation240W (Tc)

Mechanical

PackageBulk
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3PL

Environmental

Operating Temperature-55°C~150°C(TJ)