PJW5N10_R2_00001

Panjit International Inc

PJW5N10_R2_00001

Datasheet

Analog & Power

100V N-CHANNEL ENHANCEMENT MODE

ActiveTO-261-4, TO-261AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs130mOhm @ 2.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds707 pF @ 30 V
ManufacturerPanjit International Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C3.1A (Ta), 5A (Tc)
Max Power Dissipation3.1W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223

Environmental

Operating Temperature-55°C~150°C(TJ)