PJS6461-AU_S1_000A1

Panjit International Inc

PJS6461-AU_S1_000A1

Datasheet

Analog & Power

60V P-CHANNEL ENHANCEMENT MODE M

ActiveSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs110mOhm @ 3.2A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds785 pF @ 30 V
ManufacturerPanjit International Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C3.2A (Ta)
Max Power Dissipation2W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 150°C (TJ)
QualificationAEC-Q101