PJS6417_S1_00001

Panjit International Inc

PJS6417_S1_00001

Datasheet

Analog & Power

20V P-CHANNEL ENHANCEMENT MODE M

ActiveSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs35mOhm @ 6.5A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs18.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1760 pF @ 10 V
ManufacturerPanjit International Inc.
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id900mV @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C6.5A (Ta)
Max Power Dissipation2W (Ta)

Mechanical

Package / CaseSOT-23-6
Supplier Device PackageSOT-23-6

Environmental

Operating Temperature-55°C ~ 150°C (TJ)