PJQ5866A_R2_00001

Panjit International Inc

PJQ5866A_R2_00001

Datasheet

Analog & Power

MOSFET 2N-CH 60V 7A/40A 8DFN

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs17mOhm @ 20A, 10V
Base Product NumberPJQ5866
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs13.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1574pF @ 25V
ManufacturerPanjit International Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C7A (Ta), 40A (Tc)
Power - Max1.7W (Ta), 56W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerTDFN
Supplier Device PackageDFN5060B-8

Environmental

Operating Temperature-55°C ~ 150°C (TJ)