PJQ5458A-AU_R2_000A1

Panjit International Inc

PJQ5458A-AU_R2_000A1

Datasheet

Analog & Power

60V N-CHANNEL ENHANCEMENT MODE M

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs50mOhm @ 8A, 10A
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds815 pF @ 15 V
ManufacturerPanjit International Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C4.4A (Ta), 16A (Tc)
Max Power Dissipation2.4W (Ta), 32.6W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Supplier Device PackageDFN5060-8

Environmental

Operating Temperature-55°C~175°C(TJ)