PJQ4464AP-AU_R2_000A1

Panjit International Inc

PJQ4464AP-AU_R2_000A1

Analog & Power

60V N-CHANNEL ENHANCEMENT MODE M

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs17mOhm @ 16A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1574 pF @ 25 V
ManufacturerPanjit International Inc.
Mounting TypeSurface Mount
Product StatusActive
SeriesAutomotive, AEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C7.3A (Ta), 33A (Tc)
Max Power Dissipation2.4W (Ta), 48W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerVDFN
Supplier Device PackageDFN3333-8

Environmental

Operating Temperature-55°C ~ 175°C (TJ)