PJQ4463AP-AU_R2_000A1

Panjit International Inc

PJQ4463AP-AU_R2_000A1

Datasheet

Analog & Power

60V P-CHANNEL ENHANCEMENT MODE M

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs68mOhm @ 6A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds879 pF @ 30 V
ManufacturerPanjit International Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C4.2A (Ta)
Max Power Dissipation2.1W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 150°C (TJ)
QualificationAEC-Q101