PJQ4437EP-AU_R2_002A1

Panjit International Inc

PJQ4437EP-AU_R2_002A1

Datasheet

Analog & Power

30V P-CHANNEL ENHANCEMENT MODE M

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs15.4mOhm @ 10A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1270 pF @ 25 V
ManufacturerPanjit International Inc.
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C10A (Ta), 41A (Tc)
Max Power Dissipation2.5W (Ta), 41W (Tc)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101