PJQ4407P_R1_00001

Panjit International Inc

PJQ4407P_R1_00001

Datasheet

Analog & Power

30V P-CHANNEL ENHANCEMENT MODE M

Discontinued8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs20mOhm @ 8A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1169 pF @ 15 V
ManufacturerPanjit International Inc.
Mounting TypeSurface Mount
Product StatusNot For New Designs
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C8.5A (Ta), 30A (Tc)
Max Power Dissipation2W (Ta), 27W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Supplier Device PackageDFN3333-8

Environmental

Operating Temperature-55°C ~ 150°C (TJ)