PJQ2800_R1_00001

Panjit International Inc

PJQ2800_R1_00001

Datasheet

Analog & Power

MOSFET 2N-CH 20V 5.2A 6DFN

Active6-VDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs32mOhm @ 5.2A, 4.5V
Base Product NumberPJQ2800
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs6.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds515pF @ 10V
ManufacturerPanjit International Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id900mV @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C5.2A (Ta)
Power - Max1.45W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-VDFN Exposed Pad
Supplier Device PackageDFN2020-6L

Environmental

Operating Temperature-55°C ~ 150°C (TJ)