PJQ2461_R1_00001

Panjit International Inc

PJQ2461_R1_00001

Datasheet

Analog & Power

60V P-CHANNEL ENHANCEMENT MODE M

Discontinued6-WDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs190mOhm @ 2A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds430 pF @ 30 V
ManufacturerPanjit International Inc.
Mounting TypeSurface Mount
Product StatusNot For New Designs
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C2.4A (Ta)
Max Power Dissipation2W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-WDFN Exposed Pad
Supplier Device PackageDFN2020B-6

Environmental

Operating Temperature-55°C~150°C(TJ)