PJQ2416_R1_00001

Panjit International Inc

PJQ2416_R1_00001

Datasheet

Analog & Power

DFN2020B-6L, MOSFET

Active6-WDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs11mOhm @ 9.5A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1177 pF @ 10 V
ManufacturerPanjit International Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Max Power Dissipation2W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-WDFN Exposed Pad
Supplier Device PackageDFN2020B-6

Environmental

Operating Temperature-55°C~150°C(TJ)