PJQ1916_R1_00201

Panjit International Inc

PJQ1916_R1_00201

Datasheet

Analog & Power

20V N-CHANNEL ENHANCEMENT MODE M

Active3-UFDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs300mOhm @ 500mA, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds46 pF @ 10 V
ManufacturerPanjit International Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C950mA (Ta)
Max Power Dissipation500mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case3-UFDFN
Supplier Device PackageDFN1006-3

Environmental

Operating Temperature-55°C~150°C(TJ)