PJQ1902_R1_00001

Panjit International Inc

PJQ1902_R1_00001

Analog & Power

30V N-CHANNEL ENHANCEMENT MODE M

Discontinued3-UFDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.2Ohm @ 350mA, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.87 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds34 pF @ 15 V
ManufacturerPanjit International Inc.
Mounting TypeSurface Mount
Product StatusNot For New Designs
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id1.1V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C500mA (Ta)
Max Power Dissipation700mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case3-UFDFN
Supplier Device Package3-DFN (0.6x1)

Environmental

Operating Temperature-55°C~150°C(TJ)