PJF4NA90_T0_00001

Panjit International Inc

PJF4NA90_T0_00001

Analog & Power

900V N-CHANNEL MOSFET

ObsoleteTO-220-3 Full Pack, Isolated TabAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.4Ohm @ 2A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds710 pF @ 25 V
ManufacturerPanjit International Inc.
Mounting TypeThrough Hole
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage900 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Max Power Dissipation44W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3 Full Pack, Isolated Tab
Supplier Device PackageITO-220AB-F

Environmental

Operating Temperature-55°C ~ 150°C (TJ)