PJF18N20_T0_00001

Panjit International Inc

PJF18N20_T0_00001

Datasheet

Analog & Power

200V N-CHANNEL ENHANCEMENT MODE

ActiveTO-220-3 Full PackAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs160mOhm @ 9A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1017 pF @ 25 V
ManufacturerPanjit International Inc.
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage200 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Max Power Dissipation50W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3 Full Pack
Supplier Device PackageITO-220AB

Environmental

Operating Temperature-55°C ~ 150°C (TJ)