PJD9N10A_L2_00001

Panjit International Inc

PJD9N10A_L2_00001

Datasheet

Analog & Power

100V N-CHANNEL MOSFET

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs152mOhm @ 4.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1021 pF @ 25 V
ManufacturerPanjit International Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C2.4A (Ta), 9A (Tc)
Max Power Dissipation2W (Ta), 31W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252

Environmental

Operating Temperature-55°C~150°C(TJ)