PJD4NA65_L2_00001

Panjit International Inc

PJD4NA65_L2_00001

Analog & Power

650V N-CHANNEL MOSFET

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.7Ohm @ 2A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs11.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds463 pF @ 25 V
ManufacturerPanjit International Inc.
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Max Power Dissipation77W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252

Environmental

Operating Temperature-55°C~150°C(TJ)