VEC2616-TL-W

onsemi

VEC2616-TL-W

Analog & Power

MOSFET N/P-CH 60V 3A/2.5A SOT28

Obsolete8-SMD, Flat LeadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs80mOhm @ 1.5A, 10V
Base Product NumberVEC2616
ConfigurationN and P-Channel
FET FeatureLogic Level Gate, 4V Drive
Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds505pF @ 20V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.6V @ 1mA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C3A, 2.5A
Power - Max1W

Mechanical

PackageTape & Reel (TR)
Package / Case8-SMD, Flat Lead
Supplier Device PackageSOT-28FL/VEC8

Environmental

Operating Temperature150°C (TJ)