SVC6H890N

onsemi

SVC6H890N

Analog & Power

SVC6H890N

DiscontinuedDieAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs530µOhm @ 50A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs485 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds31000 pF @ 48 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusLast Time Buy
SeriesAutomotive, AEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.7V @ 1.4mA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C620A (Ta)

Mechanical

PackageBulk
Package / CaseDie
Supplier Device PackageDie

Environmental

Operating Temperature-55°C~175°C(TJ)