STD5407NNT4G

onsemi

STD5407NNT4G

Datasheet

Analog & Power

MOSFET N-CH 40V DPAK-3

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs26mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 32 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 250µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Current - Continuous Drain (Id) @ 25°C7.6A (Ta), 38A (Tc)
Max Power Dissipation2.9W (Ta), 75W (Tc)

Mechanical

PackageTape & Reel (TR)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101