Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 4.25Ohm @ 250mA, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 25 V |
| Manufacturer | onsemi |
| Mounting Type | Through Hole |
| Packaging | Cut Tape (CT) Tape & Box (TB) |
| Part Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±50V |
| Vgs(th) (Max) @ Id | 3.7V @ 250µA |
| Drain-to-Source Voltage | 450 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Tc) |
| Max Power Dissipation | 900mW (Ta) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
|---|---|
| Supplier Device Package | TO-92-3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|