RFD3055LESM

onsemi

RFD3055LESM

Analog & Power

MOSFET N-CH 60V 11A TO252AA

ObsoleteTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs107mOhm @ 8A, 5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 25 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)5V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Max Power Dissipation38W (Tc)

Mechanical

PackageTube
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252AA

Environmental

Operating Temperature-55°C ~ 175°C (TJ)